Delivering optimum flexibility in power systems, Nexperia e-mode GaN FETs are ideal for low-power 650 V applications. Offering superior switching performance due to very low QC and QOSS values, they bring improved efficiency to 650 V AC/DC and DC/AC power conversion, as well as bringing significant space and BOM savings in BLDC and micro servo motor drives or LED drivers. Nexperia’s portfolio includes five 650 V rated e-mode GaN FETs with RDS(ON) values between 80 mΩ and 190 mΩ in a choice of DFN 5 mm x 6 mm and DFN 8 mm x 8 mm packages. They improve power conversion efficiency in high-voltage, low-power (<650 V) datacom/telecom, consumer charging, solar, and industrial applications. They can also be used to design brushless DC motors and micro server drives for precision with higher torque and more power.