Excelitas Technologies' Generation 2 high-volume pulsed semiconductor laser diode (PLD) emits at 905 nm in the near-infrared and features a multi-layer monolithic chip design. With an optical emitting area of 225 µm x 10 µm by the emission of three laser lines, the Gen 2 905 PLD offers high output power in a small emitting area. This product provides higher efficiency (3 W/A) than its predecessor for further ranging and reduced power consumption. Its improved GaAs structure offers typically 85 W pulsed peak power when driven at 30 A for an increase of more than 20% optical power at the same drive current. The Generation 2 905 nm high-volume PLD is an ideal solution for industrial and consumer range finding and LiDAR applications involving time-of-flight (ToF) measurements.